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  • Conference on Lasers and Electro-Optics/Pacific Rim 2007
  • (Optica Publishing Group, 2007),
  • paper ThP_028

High Areal Density and Broadband Emission from InAs Quantum Dots for Superluminescent Diodes

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Abstract

High areal density (1.4×1011 cm−2) and broad spectral width (136nm) were obtained from the optimized InAs quantum dot sample. These results will contribute to an improvement in the performance of the current quantum dot superluminescent diodes.

© 2007 IEEE

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