Abstract
A low cost integration technology has been developed to assemble 2.5 and 10 Gb/s photodiodes. It relies on flip-chiped devices with lensed fibres positioned in V-grooves. For 2.5 Gb/s the photodiode, the fibre and the transimpedance amplifier are integrated on a single Si motherboard compatible with mounting in a mini-dil module. The sensitivity is −23.5 dBm at 10−10 BER with no error floor.
© 2001 IEEE
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