Abstract
We demonstrate ultra-low switching energy (9.4 fJ/bit), ultra-low swing voltage (150 mV peak-peak) electro-optic modulation in a 2.5 μm radius silicon ring modulator. These results can enable direct logic driven silicon modulators.
© 2010 Optical Society of America
PDF ArticleMore Like This
Gary Shambat, Bryan Ellis, Arka Majumdar, and Jelena Vuckovic
CTuN2 CLEO: Science and Innovations (CLEO:S&I) 2011
William A. Zortman, Michael R. Watts, Douglas C. Trotter, Ralph W. Young, and Anthony L. Lentine
CThJ4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010
Po Dong, Shirong Liao, Dazeng Feng, Hong Liang, Dawei Zheng, Roshanak Shafiiha, Xuezhe Zheng, Guoliang Li, Kannan Raj, Ashok V. Krishnamoorthy, and Mehdi Asghari
JWA31 National Fiber Optic Engineers Conference (NFOEC) 2010