Lasing in Optically Pumped Ga(NAsP)/(BGa)(AsP) Heterostructures on Silicon

C. Lange; N. S. Köster; D. J. Franzbach; S. Chatterjee; W. W. Rühle; S. Zinnkann; S. Liebich; I. Nemeth; R. Fritz; K. Volz; W. Stolz; B. Kunert; N. C. Gerhardt; N. Koukourakis; M. Hofmann

doi:10.1364/CLEO.2009.CTuY2

Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
OSA Technical Digest (CD) (Optica Publishing Group, 2009),
paper CTuY2
•https://doi.org/10.1364/CLEO.2009.CTuY2

Lasing in Optically Pumped Ga(NAsP)/(BGa)(AsP) Heterostructures on Silicon

C. Lange, N. S. Köster, D. J. Franzbach, S. Chatterjee, W. W. Rühle, S. Zinnkann, S. Liebich, I. Nemeth, R. Fritz, K. Volz, W. Stolz, B. Kunert, N. C. Gerhardt, N. Koukourakis, and M. Hofmann

Conference on Lasers and Electro-Optics 2009

Baltimore, Maryland United States
31 May–5 June 2009
ISBN: 978-1-55752-869-8

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C. Lange, N. S. Köster, D. J. Franzbach, S. Chatterjee, W. W. Rühle, S. Zinnkann, S. Liebich, I. Nemeth, R. Fritz, K. Volz, W. Stolz, B. Kunert, N. C. Gerhardt, N. Koukourakis, and M. Hofmann, "Lasing in Optically Pumped Ga(NAsP)/(BGa)(AsP) Heterostructures on Silicon," in Conference on Lasers and Electro-Optics/International Quantum Electronics Conference, OSA Technical Digest (CD) (Optica Publishing Group, 2009), paper CTuY2.

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Abstract

We report lasing of optically pumped Ga(NAsP)/(BGa)(AsP) heterostructures grown lattice-matched on Si. Modal gain of up to 80cm⁻¹ is determined at 300K and a distinct threshold behaviour and mode spectrum is observed up to 100K.

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