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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CTuY1
  • https://doi.org/10.1364/CLEO.2009.CTuY1

A Ge-on-Si Laser for Electronic-Photonic Integration

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Abstract

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects and communications.

© 2009 Optical Society of America

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