Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CThM1
  • https://doi.org/10.1364/CLEO.2009.CThM1

Pockels Effect in Short Period Silicon Germanium Superlattices

Not Accessible

Your library or personal account may give you access

Abstract

We introduce a method for calculating Pockels coefficients in SiGe superlattices. We show that the Pockels effect in (Si)1(Ge)1 superlattices is half as strong as in GaAs. This opens a path to efficient CMOS-compatible modulators.

© 2009 Optical Society of America

PDF Article
More Like This
Nonresonant optical nonlinearity in short-period GaAs doping superlattices

Kent D. Choquette and Leon Mccaughan
TUY2 OSA Annual Meeting (FIO) 1989

The Quantum Confined Stark Effect in InAs/GaAs Short Period Strained Layer Superlattices

E. Garmire, M. Jupina, S. Koehler, T. C. Hasenberg, and A. Kost
PTh056 International Quantum Electronics Conference (IQEC) 1992

Electric field dependent effects in multiple short period strained-layer superlattice QW waveguides

Steffen D. Koehler, Elsa M. Garmire, Michael H. Jupina, Daniel Yap, Tom C. Hasenberg, T. Y. Hsu, and Alan Kost
CTuS6 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.