Lasing Action in Optically Pumped Ga(NAsP)/GaP Heterostructures

S. Borck; J. Heber; B. Kunert; K. Volz; W. Stolz; S. Chatterjee; W.W. Rühle

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2006),
paper CMBB3

Lasing Action in Optically Pumped Ga(NAsP)/GaP Heterostructures

S. Borck, J. Heber, B. Kunert, K. Volz, W. Stolz, S. Chatterjee, and W.W. Rühle

Conference on Lasers and Electro-Optics 2006

Long Beach, California United States
21–26 May 2006
ISBN: 1-55752-813-6

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New Semiconductor Laser Materials (CMBB)

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S. Borck, J. Heber, B. Kunert, K. Volz, W. Stolz, S. Chatterjee, and W. W. Rühle, "Lasing Action in Optically Pumped Ga(NAsP)/GaP Heterostructures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2006), paper CMBB3.

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Abstract

We report lasing of optically pumped Ga(AsNP)/GaP multiple quantum-well structures grown pseudomorphically on GaP substrate. A distinct threshold behaviour is observed at both cryogenic and room temperature; modal gain of up to 20cm⁻¹ is determined.

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