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Visible light emitting diodes (LED’s) based on III-nitrides are of great current interest for applications in displays and solid-state lighting. The development of red LED’s based on InGaN, however, is rather difficult. An alternative approach for red light emission is the doping of Eu3+ into GaN. In this paper we present the optical properties of Eu doped GaN.
© 2003 Optical Society of America
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