Recent Progress in Red LEDs with Eu-doped GaN

Yasufumi Fujiwara

doi:10.1364/AIOM.2012.ITh5B.4

Lasers, Sources, and Related Photonic Devices
OSA Technical Digest (CD) (Optica Publishing Group, 2012),
paper ITh5B.4
•https://doi.org/10.1364/AIOM.2012.ITh5B.4

Recent Progress in Red LEDs with Eu-doped GaN

Yasufumi Fujiwara

Advances in Optical Materials 2012

San Diego, California United States
1–3 February 2012
ISBN: 978-1-55752-933-6

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Semiconductor-based Optical materials (ITh5B)

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Y. Fujiwara, "Recent Progress in Red LEDs with Eu-doped GaN," in Lasers, Sources, and Related Photonic Devices, OSA Technical Digest (CD) (Optica Publishing Group, 2012), paper ITh5B.4.

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Abstract

A new type of light-emitting diode with Eu-doped GaN can exhibit characteristic red emission due to the intra-4f shell transitions of Eu³⁺ ions at room temperature. By optimizing growth conditions and device structures, the light output power continues to grow steadily up to 50 μW.

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