Abstract

The characteristics of DFB lasers, external cavity tunable lasers, and semiconductor optical amplifiers are presented to demonstrate the versatility of GaAs-based quantum dot materials technology. For the DFB laser, a temperature-insensitive slope efficiency, low threshold, and feedback resistance are primary advantages. The external cavity tuned device has a 90 nm range, and the SOA demonstrates 18 dB gain and 9 ps gain recovery time.

© 2003 Optical Society of America

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