Abstract

GaInNAs is widely considered a promising material for future optical communication systems.¹ The introduction of nitrogen into InGaAs largely reduces the compressive strain on the GaAs substrate, which makes 1300-1550 nm vertical cavity surface emitting laser (VCSEL) on the GaAs substrate possible.² The better conduction band confinement of GalnNAs also results in superior temperature characteristics of GalnNAs optoelectronic devices than conventional InGaAsP/ InP devices. However, the significant size different between nitrogen atom and arsenic atom leads to phase segregation during epitaxy, which enhance the difficulty of growing GalnNAs on GaAs substrate, especially for metal-organic chemical vapor epitaxy (MOCVD).^3,4 The study focuses on GalnNAs/GaAs single quantum wells (QW’s) grown by MOCVD with different group III source partial pressure ratio. Rapid thermal annealing (RTA) is performed to enhance the optical properties. Photoluminescence (PL) and double crystal X-ray diffraction (DCD) are measured to evaluate the structural properties of the grown GalnNAs/GaAs SQW. The results show the mutually exclusive properties between indium and nitrogen atoms in GalnNAs material.

© 2002 Optical Society of America