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The long-wavelength vertical-cavity surface- emitting laser (VCSEL) is one of the most suitable devices for optical interconnections and local area networks (LANs). GaAs-based VCSELs are expected for long-wavelength VCSELs. because we can use the Al(Ga)As/GaAs distributed Bragg reflector (DBR) and the confinement structure by AlAs selective oxidation technique, which are established in 0.85 μm, 0.98 μm VCSELs. Several 1.3 μm materials that can be formed on a GaAs substrate have been proposed. Recently, room temperature CW operation of 1.3 μm VCSELs using InAs-lnGaAs quantum dot, 1 GaAsSb quantum well (QW) were reported.2
© 2002 Optical Society of America
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