1.3 μm InGaAs GnPAsSb light emitting diode grown on GaAs

P. Dowd; W. Braun; C. M. Ryu; C.-Z. Guo; S. L. Chen; U. Koelle; S.R. Johnson; Y.-H. Zhang; D. J. Smith; D. J. Smith

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1999),
paper CThV5

1.3 μm InGaAs GnPAsSb light emitting diode grown on GaAs

P. Dowd, W. Braun, C. M. Ryu, C.-Z. Guo, S. L. Chen, U. Koelle, S.R. Johnson, Y.-H. Zhang, and D. J. Smith

Conference on Lasers and Electro-Optics 1999

Baltimore, Maryland United States
23–26 May 1999
ISBN: 1-55752-570-6

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P. Dowd, W. Braun, C. M. Ryu, C. -. Guo, S. L. Chen, U. Koelle, S. R. Johnson, Y. -. Zhang, and D. J. Smith, "1.3 μm InGaAs GnPAsSb light emitting diode grown on GaAs," in Conference on Lasers and Electro-Optics, C. Chang-Hasnain, W. Knox, J. Kafka, and K. Vahala, eds., OSA Technical Digest (Optica Publishing Group, 1999), paper CThV5.

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Abstract

Vertical-cavity surface-emitting lasers (VCSELs) and resonant-cavity photodiodes (RCPDs) operating at 1.3 μm and 1.55 μm are desirable for optical interconnects and local area networks. Since the growth of mirrors on non-GaAs substrates is not a trivial issue, there is significant interest in developing devices based on GaAs to take advantage of high-quality GaAs/AlAs mirrors at the long wavelengths.

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