Oxide confinement: A revolution in VCSEL technology

D. G. Deppe; D. L. Huffaker; T.-H. Oh

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1997),
paper CWA1

Oxide confinement: A revolution in VCSEL technology

D. G. Deppe, D. L. Huffaker, and T.-H. Oh

Conference on Lasers and Electro-Optics 1997

Baltimore, Maryland United States
18–23 May 1997
ISBN: 1-55752-498-8

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Oxide-Confined VCSELs (CWA)

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D. G. Deppe, D. L. Huffaker, and T. -. Oh, "Oxide confinement: A revolution in VCSEL technology," in Conference on Lasers and Electro-Optics, D. Killinger, G. Valley, C. Chang-Hasnain, and W. Knox, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1997), paper CWA1.

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Abstract

In just three years since its first introduction,^1,2 the oxide-confined VCSEL has come to dominate much of the semiconductor laser research effort.^3-9

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