Abstract
Recently erbium-doped semiconductors have attracted much attention. This is partly because of the fact that the strong intra-4f-shell emission of erbium centers at 1.54 µm coincides with the minimum transmission loss of the silica-based optical fibers. Most Er-doped semiconductors suffer from serious thermal quenching of luminescence in which the luminescence intensity decreases by more than 2 orders of magnitude as the temperature increases from 10 K to room temperature. However, Wang and Wessels1 recently demonstrated that the emission intensity from Er-doped GaP is only weakly temperature dependent, and strong emission from Er centers was observed at room temperature. This observation indicates that Er-doped GaP is a potentially promising optical material for light-emitting or lasing devices operating at 1.54 µm at room temperature.
© 1995 Optical Society of America
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