Abstract
The ever-improving quality of GaN, AlGaN, and InGaN epitaxial films leads to the prospect of high-performance blue-emitting quantum-well lasers in these material systems in the very near future. We have calculated the gain and spontaneous recombination current for GaN-AlGaN-quantum-well lasers and have estimated the likely threshold current of such devices.
© 1995 Optical Society of America
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