Abstract
There currently exists a concerted research effort in the field of surface-normal optoelectronic devices for applications involving optical communications, computing, and signal processing. A critical element for many of these applications is a device capable of significant modulation at voltages available from silicon circuitry. Considerable work has been done on asymmetric Fabry-Perot modulators (AFPMs) to increase modulation levels,1 engineer the devices to work at specific desired wavelengths,2 and lower the operational voltage of these devices,3 which has often been near the −10 V mark. The advancements in "flip-chip" and "lift-off" hybrid optoelectronic fabrication4 make even more desirable the AFPM, which functions at silicon circuitry levels.
© 1994 Optical Society of America
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