Time-resolved study of a multiple quantum well surface-emitting laser

Y. Boucher; H. Sauer; P. Georges; A. Brun; J. P. Pocholle; J. P. Pocholle; M. Papuchon

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1993),
paper CTuN15

Time-resolved study of a multiple quantum well surface-emitting laser

Y. Boucher, H. Sauer, P. Georges, A. Brun, J. P. Pocholle, and M. Papuchon

Conference on Lasers and Electro-Optics 1993

Baltimore, Maryland United States
2–7 May 1993
ISBN: 1-55752-189-1

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Poster Session 1 (CTuN)

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Y. Boucher, H. Sauer, P. Georges, A. Brun, J. P. Pocholle, and M. Papuchon, "Time-resolved study of a multiple quantum well surface-emitting laser," in Conference on Lasers and Electro-Optics, A. Glass, T. Hsu, T. Deutsch, and J. Goldman, eds., Vol. 10 of OSA Technical Digest (Optica Publishing Group, 1993), paper CTuN15.

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Abstract

We are currently studying a vertical-cavity surface-emitting laser (VCSEL.) grown by molecular beam epitaxy (MBE). This structure consists of a fourteen 100 Ǻ GaAs quantum-well (QW) active region sandwiched between two integrated AlAs/ AlGaAs Bragg reflectors, Tbe width and depth of the quantum wells allow two transitions between the conduction band and the valence band to contribute to the wide spectral repartition of tire optical gain. For a carrier density greater than 5 × 10¹⁸ cm^-3, the theoretical gain of the second quantum transition involved (e2-h2) tends to exceed that of the first (e1-h1).

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