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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1993),
  • paper CTuN16

Strain dependence of the threshold current in quantum well lasers

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Abstract

Tire incorporation of strain in InGaAs/InGaAsP/InP quantum well lasers, both compressive and tensile, reduces the threshold current density compared to unstrained devices of similar emission wavelength.1

© 1993 Optical Society of America

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