Abstract
New results of studies of optoelectronic bistability in a gallium phosphide light emitting diode (GaP LED) at 77 K are presented. The bistability, based on the negative differential resistance occurring in the forward biased current voltage (I-V) characteristic, has been previously reported.1,2 A The GaP LED showed bistable characteristics in the current, optical output intensity, and optical output peak wavelength. Recent results include optical gating of an LED with another LED and development of a predictive model.
© 1989 Optical Society of America
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