Abstract
The presence of hydrogen in tellurium thin films used as optical recording media has been found to decrease the writing energy threshold1,2 and to increase chemical resistance.2 For the case when an ion implantation technique is used to introduce impurities into the thin films, two main mechanisms, implantation damage and the presence of implants in the films, affect the optical recording properties of the implanted films. We report the results of a study of the relative influence of ion implantation mechanisms on the optical recording properties of Te:He thin films.
© 1989 Optical Society of America
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