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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1989),
  • paper MF3

Eight- to twelve-micron infrared detectors using high quality CdHgTe epitaxial wafers

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Abstract

The II—VI compound semiconductor CdHgTe(CMT) is a promising material for detectors in the 8-12-μm spectral region. The performance of the detector depends greatly on the quality of the material and the structure of the device. We present our recent results concerning photoconductive (PC) and photovoltaic (PV) detectors.

© 1989 Optical Society of America

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