Abstract
Uniaxial compressive stress applied to semiconductor diode lasers produces changes in threshold1 and efficiency2 and anomalous polarization behavior.3 In the present work, unmounted InGaAsP laser chips are placed across two diamond supports as shown in Fig. 1, and stress is applied with a probe which has a uniform cross section along the axis of the laser cavity. The force is calibrated by a spring mount which supports the probe. The laser is operated with short current pulses and a low-duty cycle to avoid effects due to the thermal impedance between the laser and its supports. Using this arrangement both compressive and tensile stresses within the active region can be produced and studied in the same chip by placing the laser either p-side up or down.
© 1988 Optical Society of America
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