Abstract
The AlxGa1–x)yin1–y P material system, lattice matched to GaAs substrates, has received much attention for use in visible laser diodes emitting in the spectral region λ ~ 650-680 nm. When lattice matched to GaAs (y = 0.5), this alloy spans a direct band gap range from ~1.85 eV (at x = 0) to ~2.3 eV (near the Γ-X crossover at x ~ 0.7). It was only recently that device quality epitaxial layers have been prepared in this material due to difficulties with liquid phase epitaxial (LPE) and halide vapor phase epitaxial growth,1 Only organometallic vapor phase epitaxy2–8 (OMVPE) and molecular beam epitaxy (MBE)9 growth techniques have successfully produced AIGalnP laser material.
© 1988 Optical Society of America
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