Defect population in Ge doped silica studied by fluorescence spectroscopy.

B. Poumellec; H. Cens; A. Trukhin; J. C. Krupa; B. Leconte; M. Bubnov

doi:10.1364/BGPPF.1997.JSuE.7

Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals
Technical Digest Series (Optica Publishing Group, 1997),
paper JSuE.7
•https://doi.org/10.1364/BGPPF.1997.JSuE.7

Defect population in Ge doped silica studied by fluorescence spectroscopy.

B. Poumellec, H. Cens, A. Trukhin, J. C. Krupa, B. Leconte, and M. Bubnov

Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides 1997

Williamsburg, Virginia United States
26–28 October 1997
ISBN:

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Linear and Nonlinear Optical Phenomena in Glass GOMD/BGPP Joint Poster Session (JSuE)

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B. Poumellec, H. Cens, A. Trukhin, J. C. Krupa, B. Leconte, and M. Bubnov, "Defect population in Ge doped silica studied by fluorescence spectroscopy.," in Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals, Technical Digest Series (Optica Publishing Group, 1997), paper JSuE.7.

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Abstract

The interest for Ge doped SiO₂ properties is revived by the search of optimisation of photorefractivity. The first step of the mechanism is an absorption at around 240-250 nm or 193 nm. Next step of the transformation leads to index change . Whatever it is connected to a special defect or not, the study of the defect population increases our understanding on that subject and for other applications (fiber line attenuation, nonlinear effect). In this paper, we show that UV spectrum of MCVD doped silica is composed of several gaussian components which appear at the same position and with the same width but varie in intensity depending on the samples. We try to systematize this population.

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