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Conferences > ACPC > 2021 > T2D > T2D.5

1300 nm and 1500 nm InAs/GaAs quantum dot lasers directly grown on SOI substrates for silicon photonics integration

Wenqi Wei, Zihao Wang, Ting Wang, and Jianjun Zhang

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Abstract

By using (111)-faceted silicon hollow structures, high-performance 1300 nm and 1500 nm InAs/GaAs quantum dot lasers are epitaxially grown and fabricated on SOI substrates by an III-V/IV dual chamber MBE for silicon photonics integration.

© 2021 The Author(s)

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