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Telecom InAs quantum-dot FP and microdisk lasers epitaxially grown on (111)-faceted SOI

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Abstract

By utilizing homo-epitaxially formed (111)-faceted silicon hollow structures on U- shaped patterned silicon on insulator (SOI) substrates, 1310 nm and 1510 nm InAs quantum dot (QD) fabry-perot and microdisk lasers are achieved on such platform, which paves a promising way to realize silicon-based light source for silicon photonic integration.

© 2020 The Author(s)

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