Abstract

A yellow InGaP light emitting diode (LED) emitting at 590 nm epitaxially grown on Si substrate with SiGe and GaAsP buffer layers is demonstrated. Characterizations of the epitaxy growth and device fabrication are presented.

© 2015 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription