Abstract
A yellow InGaP light emitting diode (LED) emitting at 590 nm epitaxially grown on Si substrate with SiGe and GaAsP buffer layers is demonstrated. Characterizations of the epitaxy growth and device fabrication are presented.
© 2015 Optical Society of America
PDF ArticleMore Like This
Linus C. Chuang, Roger Chen, Forrest Sedgwick, Wai Son Ko, Kar Wei Ng, Thai-Truong D. Tran, and Connie Chang-Hasnain
CMFF6 Conference on Lasers and Electro-Optics (CLEO:S&I) 2010
Aditya Prabaswara, Tien Khee Ng, Chao Zhao, Bilal Janjua, Ahmed Y. Alyamani, Munir M. El-Desouki, and Boon S. Ooi
STh3N.5 CLEO: Science and Innovations (CLEO:S&I) 2017
Seyed Amir Ghetmiri, Wei Du, Yiyin Zhou, Joe Margetis, Thach Pham, Aboozar Mosleh, Benjamin R. Conley, Amjad Nazzal, Greg Sun, Richard Soref, John Tolle, Hameed A. Naseem, Baohua Li, and Shui-Qing Yu
ATu1J.6 CLEO: Applications and Technology (CLEO:A&T) 2015