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Conferences > ACPC > 2013 > AF1B > AF1B.5

Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

Zhiqiang Bian, Qi Wang, Zhigang Jia, Zhihong Pan, Xiaomin Ren, Shiwei Cai, Jun Wang, and Yongqing Huang

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Abstract

The growth of InAs/GaAs quantum dots was investigated with GaAsP as a strain-reducing layer. Room-temperature photoluminescence demonstrated the improvement in luminescence properties for multi-stacked QDs with a linewidth of 60emV at 1.1μm wavelength.

© 2013 Optical Society of America

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