Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer

Y. Yu; L. R. Huang; P. Tian; D. X. Huang

doi:10.1364/ACP.2010.79870N

Optoelectronic Materials and Devices V
Proceedings of SPIE-OSA (Optica Publishing Group, 2010),
paper 79870N
•https://doi.org/10.1364/ACP.2010.79870N

Self-assembled InAs/GaAs quantum dot molecules with In_xGa_1-xAs strain-reducing layer

Y. Yu, L. R. Huang, P. Tian, and D. X. Huang

Asia Communications and Photonics Conference and Exhibition 2010

Shanghai China
8–12 December 2010
ISBN: 9780819485557

From the session
POSTER SESSION (PSII)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
Y. Yu, L. R. Huang, P. Tian, and D. X. Huang, "Self-assembled InAs/GaAs quantum dot molecules with InxGa1-xAs strain-reducing layer," in Optoelectronic Materials and Devices V, F. Koyama, S. Chuang, G. Duan, and Y. Huang, eds., Vol. 7987 of Proceedings of SPIE-OSA (Optica Publishing Group, 2010), paper 79870N.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

Self-assembled lateral aligned InAs quantum dot molecules (QDMs) with In_xGa_1-xAs strain-reducing layer are grown on GaAs substrate by metal-organic chemical vapor deposition. The effects of growth temperature and In content of In_xGa_1-xAs on the structural and optical properties of QDMs are investigated by using atomic force microscopy and photoluminescence. It is found that through appropriately selecting growth parameters, QDMs composed of two closely spaced InAs QDs are formed, and a redshift of emission wavelength and wideband photoluminescence spectra of QDMs are observed, which make QDM a potential candidate for broadband optical devices.

PDF Article

More Like This

Strain induced wavelength shift in self-assembled InAs/GaAs quantum dots grown by MOCVD

Song Liang, Hongliang Zhu, and Wei Wang
239 Photorefractive Effects, Materials, and Devices (PR) 2005

Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD

Pengyu Wang, Qi Wang, Xin Guo, Zhigang Jia, Tianhe Li, Xiaomin Ren, and Shiwei Cai
83082C Asia Communications and Photonics Conference and Exhibition (ACP) 2011

Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

Zhiqiang Bian, Qi Wang, Zhigang Jia, Zhihong Pan, Xiaomin Ren, Shiwei Cai, Jun Wang, and Yongqing Huang
AF1B.5 Asia Communications and Photonics Conference (ACP) 2013

Previous Article Next Article