Abstract

A quasi-two-dimensional layer of MoS2 was placed on top of a silicon optical waveguide to form a MoS2–silicon hybrid structure. Chirped pulse self-phase modulation measurements were carried out to determine the optical Kerr nonlinearity of the structure. The observed increase in the spectral broadening of the optical pulses in the MoS2–silicon waveguide compared with the silicon waveguides indicated that the third-order nonlinear effect in MoS2 is about 2 orders of magnitude larger than that in silicon. The measurements show that MoS2 has an effective optical Kerr coefficient of about 1.1×1016m2/W. This work reveals the potential application of MoS2 to enhance the nonlinearity of hybrid silicon optical devices.

© 2015 Chinese Laser Press

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References

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    [Crossref]
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2014 (2)

H. Liu, A.-P. Luo, F.-Z. Wang, R. Tang, M. Liu, Z.-C. Luo, W.-C. Xu, C.-J. Zhao, and H. Zhang, “Femtosecond pulse erbium-doped fiber laser by a few-layer MoS2 saturable absorber,” Opt. Lett. 39, 4591–4594 (2014).
[Crossref]

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

2013 (6)

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

2012 (3)

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

2011 (1)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

2010 (2)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

2008 (2)

2005 (2)

T. Baehr-Jones, M. Hochberg, C. Walker, E. Chan, D. Koshinz, W. Krug, and A. Scherer, “Analysis of the tuning sensitivity of silicon-on-insulator optical ring resonators,” J. Lightwave Technol. 23, 4215–4221 (2005).
[Crossref]

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

1978 (1)

R. H. Stolen and C. Lin, “Self-phase-modulation in silica optical fibers,” Phys. Rev. A 17, 1448–1453 (1978).
[Crossref]

Agrawal, G. P.

G. P. Agrawal, Nonlinear Fiber Optics (Academic, 2007).

Ajayan, P. M.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Appenzeller, J.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

Baehr-Jones, T.

Berkelbach, T. C.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Brus, L. E.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

Chan, E.

Chang, C.-S.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, K.-D.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, M.-T.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chen, H.-Y.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

Chenet, D. A.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Chien, H.-C.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Chiu, H.-Y.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Das, S.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

Dubonos, S.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Fang, W.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Feng, Y.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Firsov, A.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Geim, A. K.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Grigorieva, I.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Heinz, T. F.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Hochberg, M.

Hone, J.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Hone, J. C.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Hsu, Y.-T.

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

Huang, J.-K.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Huang, P. Y.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Idrobo, J.-C.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Jiang, D.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Katsnelson, M.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Kayci, M.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Kis, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Koshinz, D.

Krug, W.

Kumar, J.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Kumar, N.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Lee, C.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

Lee, G.-H.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Lee, Y.-H.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lei, S.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Li, L.-J.

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Li, Y.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Lin, C.

R. H. Stolen and C. Lin, “Self-phase-modulation in silica optical fibers,” Phys. Rev. A 17, 1448–1453 (1978).
[Crossref]

Lin, C.-T.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lin, T.-W.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Ling, X.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Lipson, M.

Liu, H.

Liu, H.-L.

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

Liu, M.

Liu, Y.

H. Tsang and Y. Liu, “Nonlinear optical properties of silicon waveguides,” Semicond. Sci. Technol. 23, 064007 (2008).
[Crossref]

Liu, Z.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Lou, J.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Luo, A.-P.

Luo, Z.-C.

Mak, K. F.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Morozov, S.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Muller, D. A.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Najmaei, S.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Novoselov, K.

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

O’Brien, K.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

Painter, O.

Penumatcha, A. V.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

Preston, K.

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Radisavljevic, B.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Reichman, D. R.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Robinson, J. T.

Ryu, S.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

Scherer, A.

Schneider, T.

T. Schneider, Nonlinear Optics in Telecommunications (Springer, 2004).

Shan, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Shen, C.-C.

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

Shi, G.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Shi, Y.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Stolen, R. H.

R. H. Stolen and C. Lin, “Self-phase-modulation in silica optical fibers,” Phys. Rev. A 17, 1448–1453 (1978).
[Crossref]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Tang, R.

Tsang, H.

H. Tsang and Y. Liu, “Nonlinear optical properties of silicon waveguides,” Semicond. Sci. Technol. 23, 064007 (2008).
[Crossref]

van der Zande, A. M.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Walker, C.

Wang, F.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Wang, F.-Z.

Wang, H.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Wang, J.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Wang, J. T.-W.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Wang, R.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Xu, S.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Xu, W.-C.

Xu, Y.

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Yakobson, B. I.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Yan, H.

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

Ye, Y.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

Ye, Z.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

Yin, X.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

You, Y.

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Yu, L.

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

Yu, Y.-C.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhang, H.

Zhang, W.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhang, X.

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

Zhang, X.-Q.

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhao, C.-J.

Zhao, H.

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

Zhou, W.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

Zou, X.

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

ACS Appl. Mater. Interfaces (1)

R. Wang, H.-C. Chien, J. Kumar, N. Kumar, H.-Y. Chiu, and H. Zhao, “Third-harmonic generation in ultrathin films of MoS2,” ACS Appl. Mater. Interfaces 6, 314–318 (2013).
[Crossref]

ACS Nano (1)

C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, and S. Ryu, “Anomalous lattice vibrations of single-and few-layer MoS2,” ACS Nano 4, 2695–2700 (2010).
[Crossref]

Adv. Mater. (1)

Y.-H. Lee, X.-Q. Zhang, W. Zhang, M.-T. Chang, C.-T. Lin, K.-D. Chang, Y.-C. Yu, J. T.-W. Wang, C.-S. Chang, L.-J. Li, and T.-W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Appl. Phys. Express (1)

C.-C. Shen, Y.-T. Hsu, L.-J. Li, and H.-L. Liu, “Charge dynamics and electronic structures of monolayer MoS2 films grown by chemical vapor deposition,” Appl. Phys. Express 6, 125801 (2013).
[Crossref]

J. Lightwave Technol. (1)

Nano Lett. (2)

Y.-H. Lee, L. Yu, H. Wang, W. Fang, X. Ling, Y. Shi, C.-T. Lin, J.-K. Huang, M.-T. Chang, and C.-S. Chang, “Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces,” Nano Lett. 13, 1852–1857 (2013).

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2012).
[Crossref]

Nat. Mater. (2)

S. Najmaei, Z. Liu, W. Zhou, X. Zou, G. Shi, S. Lei, B. I. Yakobson, J.-C. Idrobo, P. M. Ajayan, and J. Lou, “Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers,” Nat. Mater. 12, 754–759 (2013).
[Crossref]

A. M. van der Zande, P. Y. Huang, D. A. Chenet, T. C. Berkelbach, Y. You, G.-H. Lee, T. F. Heinz, D. R. Reichman, D. A. Muller, and J. C. Hone, “Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide,” Nat. Mater. 12, 554–561 (2013).
[Crossref]

Nat. Nanotechnol. (3)

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Nature (1)

K. Novoselov, A. K. Geim, S. Morozov, D. Jiang, M. Katsnelson, I. Grigorieva, S. Dubonos, and A. Firsov, “Two-dimensional gas of massless Dirac fermions in graphene,” Nature 438, 197–200 (2005).
[Crossref]

Opt. Express (1)

Opt. Lett. (1)

Phys. Rev. A (1)

R. H. Stolen and C. Lin, “Self-phase-modulation in silica optical fibers,” Phys. Rev. A 17, 1448–1453 (1978).
[Crossref]

Phys. Rev. Lett. (1)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: a new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Science (1)

X. Yin, Z. Ye, D. A. Chenet, Y. Ye, K. O’Brien, J. C. Hone, and X. Zhang, “Edge nonlinear optics on a MoS2 atomic monolayer,” Science 344, 488–490 (2014).
[Crossref]

Semicond. Sci. Technol. (1)

H. Tsang and Y. Liu, “Nonlinear optical properties of silicon waveguides,” Semicond. Sci. Technol. 23, 064007 (2008).
[Crossref]

Other (3)

T. Schneider, Nonlinear Optics in Telecommunications (Springer, 2004).

F. Wang, S. Xu, Y. Feng, Y. Li, X. Zhang, Y. Xu, and J. Wang, “Characteristics of saturable absorption of MoS2 films in the visible to near-infrared range,” in Asia Communications and Photonics Conference (Optical Society of America, 2014), paper ATh4B.5.

G. P. Agrawal, Nonlinear Fiber Optics (Academic, 2007).

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Figures (5)

Fig. 1.
Fig. 1. (a) Scanning electron microscope image of one part of the device, with MoS2 covering both the grating couplers and waveguide regions. As the whole area is covered by the material, significant contrast does not exist. Inset: magnified picture of the grating. (b) Measured Raman spectrum of the MoS2 layer on the top of the waveguide region.
Fig. 2.
Fig. 2. (a) Experimental results of the transmission spectra of the gratings. Significant redshift of the center wavelengths was induced by the MoS2 layer. (b) FDTD simulation result for the redshift of the grating to estimate the refractive index of MoS2.
Fig. 3.
Fig. 3. Experimental setup used for measuring the third-order nonlinear coefficient of MoS2. The gain-switched DFB diode laser was used as pulse source. PC, polarization controller.
Fig. 4.
Fig. 4. Input and output spectrum of MoS2–silicon waveguide and bare silicon waveguide. Black curve is the input spectrum, while the red and blue curves are from the output of the MoS2–silicon waveguide and the bare silicon waveguide, respectively.
Fig. 5.
Fig. 5. Optical intensity distribution of the MoS2–silicon waveguide structure, which was used for nonlinear refractive index calculation. MoS2 layer, silicon core, and silicon dioxide substrate are indicated.

Equations (9)

Equations on this page are rendered with MathJax. Learn more.

ϕnlMOS=2πΔneffLeffλ,
Δneff=Δϵr|E|2dxdy2ZoRe{E*×H}·e^zdxdy,
ϵr=(n+Δn)2n2+2nΔn,Δϵr2nΔn=n2n2cϵ0|E|2,
12Re{E*×H}·e^zdxdy=12vgϵ|E|2dxdy,
Δneff=ng2·PoAeff·An2AAϵ|E|4dxdyϵ|E|4dxdy,
Aeff=[ϵ|E|2dxdy]2ϵoϵ|E|4dxdy.
ϕnlFiber=2πn2fP0fLeffλAefff,
ϕnlMOS=ϕnlFiber.
n2=34ϵ0cn2χ(3),

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