Abstract
This Letter reports the growth, fabrication, and characterization of molecular beam epitaxy (MBE)-grown quaternary InAlGaAs/GaAs quantum dot (QD) lasers emitting at sub-900 nm. The presence of Al in QD-based active regions acts as the origin of defects and non-radiative recombination centers. Applying optimized thermal annealing annihilates the defects in p-i-n diodes, thus lowering the reverse leakage current by six orders of magnitude compared to as-grown devices. A systematic improvement in the optical properties of the devices is also observed in the laser devices with increasing annealing time. At an annealing temperature of 700°C for 180 s, Fabry–Pérot lasers exhibit a lower pulsed threshold current density at infinite length of 570 A/cm2.
© 2023 Optica Publishing Group
Full Article | PDF ArticleMore Like This
Ying Gu, Yi Gong, Fan Zhang, Peng Zhang, Haowen Hua, Shan Jin, Wenxian Yang, Jianjun Zhu, and Shulong Lu
Opt. Lett. 48(24) 6460-6463 (2023)
Jonathan R. Orchard, Samuel Shutts, Angela Sobiesierski, Jiang Wu, Mingchu Tang, Siming Chen, Qi Jiang, Stella Elliott, Richard Beanland, Huiyun Liu, Peter M. Smowton, and David J. Mowbray
Opt. Express 24(6) 6196-6202 (2016)
Rosalyn Koscica, Yating Wan, William He, M. J. Kennedy, and John E. Bowers
Opt. Lett. 48(10) 2539-2542 (2023)