Abstract

Antimony sulfide (Sb₂S₃) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb₂S₃ thin film PD is fabricated on the TiO₂/SiO₂/Si substrate by the vacuum method. The p-channel Sb₂S₃ transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 10¹¹ Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.

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