Abstract

We propose a simple thin-layer structure based on epsilon-near-zero mode field enhancement to achieve optical bistability in the near-infrared band. The high transmittance provided by the thin-layer structure and the electric field energy limited in the ultra-thin epsilon-near-zero material means that the interaction between the input light and the epsilon-near-zero material can be greatly enhanced, creating favorable conditions for the realization of optical bistability in near-infrared band. The optical bistability hysteresis curve is closely related to the incident angle of light and the thickness of epsilon-near-zero material. This structure is relatively simple and easy to prepare, so we believe that this scheme will have a positive effect on the practicality of optical bistability devices in all-optical devices and networks.

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