Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Early Posting

Ultralow 0.034 dB/m loss wafer-scale integrated photonics realizing 720 million Q and 380 μW threshold Brillouin lasing

Kaikai Liu, Naijun Jin, Haotian Cheng, Nitesh Chauhan, Matthew W. Puckett, Karl D. Nelson, Ryan O. Behunin, Peter T. Rakich, and Daniel J. Blumenthal

Open Access Open Access

Abstract

We demonstrate 0.034 dB/m loss waveguides in a 200-mm wafer-scale, silicon nitride (Si3N4) CMOS-foundry-compatible integration platform. We fabricate resonators that measure up to a 720 million intrinsic Q resonator at 1615 nm wavelength with a 258 kHz intrinsic linewidth. This resonator is used to realize a Brillouin laser with an energy-efficient 380 µW threshold power. The performance is achieved by reducing scattering losses through a combination of single-mode TM waveguide design and an etched blanket-layer low-pressure chemical vapor deposition (LPCVD) 80 nm Si3N4 waveguide core combined with thermal oxide lower and tetraethoxysilane plasma-enhanced chemical vapor deposition (TEOS–PECVD) upper oxide cladding. This level of performance will enable photon preservation and energy-efficient generation of the spectrally pure light needed for photonic integration of a wide range of future precision scientific applications, including quantum, precision metrology, and optical atomic clocks.

© 2022 Optica Publishing Group

Full Article  |  PDF Article
More Like This
Ultra-low loss visible light waveguides for integrated atomic, molecular, and quantum photonics

Nitesh Chauhan, Jiawei Wang, Debapam Bose, Kaikai Liu, R. L. Compton, C. Fertig, C. W. Hoyt, and Daniel J. Blumenthal
Opt. Express 30(5) 6960-6969 (2022)

Integrated photonic molecule Brillouin laser with a high-power sub-100-mHz fundamental linewidth

Kaikai Liu, Jiawei Wang, Nitesh Chauhan, Mark W. Harrington, Karl D. Nelson, and Daniel J. Blumenthal
Opt. Lett. 49(1) 45-48 (2024)

22.5-W narrow-linewidth diamond Brillouin laser at 1064 nm

Duo Jin, Zhenxu Bai, Zhiwei Lu, Rong Fan, ZhongAn Zhao, Xuezong Yang, Yulei Wang, and Richard P. Mildren
Opt. Lett. 47(20) 5360-5363 (2022)

View More...

Supplementary Material (1)

NameDescription
Supplement 1       Supplement

Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (2)
Fig. 1.
Fig. 1. Resonator linewidth and Q: (a) 200-mm wafer after the fabrication and dicing process; (b) resonance spectral scan at 1615 nm with the 1.078 MHz FSR MZI; (c) measured loaded and intrinsic Q values from 1550 nm to 1630 nm, where M = million; (d) a ringdown time of 444 ns, corresponding to an intrinsic Q = 775 M is measured at 1615 nm.

Download Full Size | PDF

Fig. 2.
Fig. 2. SBS laser and threshold power measurement. (a) Setup for the SBS laser. PL, pump laser; PDH, Pound–Drever–Hall laser lock; PD, photodetector; OSA, optical spectrum analyzer. (b) Stokes power on the OSA with ∼4 mW on-chip pump power. (c) Measured S1 and S3 on-chip power with the calculated curves shows a threshold of 0.38 mW. (d) Calculated and measured threshold power and Brillouin gain from 1550 nm to 1610 nm.

Download Full Size | PDF

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

Pth=π2ng2LQcGBλ2QL3,
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use