Abstract

Highly doped semiconductor “designer metals” have been shown to serve as high-quality plasmonic materials across much of the long-wavelength portion of the mid-infrared. These plasmonic materials benefit from a technologically mature semiconductor fabrication infrastructure and the potential for monolithic integration with electronic and photonic devices. However, accessing the short-wavelength side of the mid-infrared is a challenge for these designer metals. In this work we study the perspectives for extending the plasmonic response of doped semiconductors to shorter wavelengths by leveraging charge confinement, in addition to doping. We demonstrate, theoretically and experimentally, negative permittivity across the technologically vital mid-wave infrared (3–5 $\mathrm{\mu}$m) frequency range. The semiconductor composites presented in our work offer an ideal material platform for monolithic integration with a variety of semiconductor optoelectronic devices operating in the mid-wave infrared.

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