Abstract
Electro-optic (EO) modulators, which convert signals from the electrical to optical domain plays a key role in modern optical communication systems. Lithium niobate on insulator (LNOI) technology has emerged as a competitive solution to realize high-performance integrated EO modulators. In this Letter, we design and experimentally demonstrate a Mach–Zehnder interferometer-based modulator on a silicon nitride loaded LNOI platform, which not only takes full advantage of the excellent EO effect of ${\rm{LiNb}}{{\rm{O}}_3}$, but also avoids the direct etching of ${\rm{LiNb}}{{\rm{O}}_3}$ thin film. The measured half-wave voltage length product of the fabricated modulator is 2.24 V·cm, and the extinction ratio is ${\sim}{{20}}\;{\rm{dB}}$. Moreover, the 3 dB EO bandwidth is ${\sim}{{30}}\;{\rm{GHz}}$, while the modulated data rate for on–off key signals can reach up to 80 Gbps.
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