Abstract

We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5μm emission band with an FWHM of 140nm and lifetime of 213μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.

© 2011 Optical Society of America

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