Abstract

The peak position and linewidth of the low-frequency Raman mode observed from amorphous silica films embedded with Ge nanocrystals doped with Si show a size-independent behavior. Spectral analysis reveals the formation of a thin amorphous GeSi layer on the surface of the Ge nanocrystal. Theoretical calculation based on a modified three-region model discloses that the acoustic impedance of the interfacial GeSiO layer is responsible for the size-independent behavior. During high-temperature annealing, Ge atoms are segregated from the interface into the core, and the GeSiO interface layer is converted to SiO2, leading to disappearance of the size-independent vibration mode.

© 2010 Optical Society of America

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