Low-temperature thermal fixing of holograms in photorefractive La₃Ga₅SiO₁₄:Pr³⁺ crystal

Abstract

Thermal fixing in a ${\mathrm{La}}_3{\mathrm{Ga}}_5{\mathrm{SiO}}_{14}:{\mathrm{Pr}}^{3+}$ photorefractive crystal is demonstrated all the way down to room temperature. This, to our knowledge, is the first report of such an effect in any photorefractive material. From the temperature dependence of the process the activation energy of the carriers involved in the fixing process is measured to be $E_A=0.89 \mathrm{eV}$. Further, an effective photorefractive charge density of $\left(1.4\pm 0.2\right)\times {10}^{16} {\mathrm{cm}}^{-3}$ and Debye screening length of $\left(6.8\pm 0.7\right)\times {10}^{-6} \mathrm{cm}$ is measured.

© 1999 Optical Society of America

Photorefractive two-step recording in a piezoelectric La₃Ga₅SiO₁₄ crystal doped with praseodymium

Thomas Nikolajsen, Per Michael Johansen, E. Dubovik, T. Batirov, and R. Djalalov
Opt. Lett. 23(15) 1164-1166 (1998)

Thermal hologram fixing in pure and doped KNbO₃ crystals

G. Montemezzani and P. Günter
J. Opt. Soc. Am. B 7(12) 2323-2328 (1990)

Lifetimes of thermally fixed holograms in LiNbO₃:Fe crystals

L. Arizmendi, E. M. de Miguel-Sanz, and M. Carrascosa
Opt. Lett. 23(12) 960-962 (1998)

Improved development of thermally fixed holograms in photorefractive LiNbO₃ crystals with high-intensity laser pulses

S. Breer, K. Buse, and F. Rickermann
Opt. Lett. 23(1) 73-75 (1998)

Optimal conditions for thermal fixing of volume holograms in Fe:LiNbO₃ crystals

Chao Ray Hsieh, Shiuan Huei Lin, Ken Y. Hsu, Tai Chiung Hsieh, Arthur Chiou, and John Hong
Appl. Opt. 38(29) 6141-6151 (1999)