Abstract
We compute the spectrally dependent electroabsorption α(ωo, F) on an undoped ZnSe layer considered as part of a p-i-n heterostructure self-electro-optic-effect device (SEED). It is shown that efficient SEED operation, with a reflectivity contrast ratio of ∼4, can be expected for a 0.3-μm-thick ZnSe layer in a reflection geometry with an applied voltage of 4 V.
© 1992 Optical Society of America
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