In Fig. 13(a) of our article [1], calculated threshold current density J_th was plotted as a function of surface recombination velocity S for four different lifetimes of 0.1, 1, 10, and 100 nsec in n⁺-Ge active layer of Ge/Si double heterostructure laser. However, the actual lifetimes used in the calculation were 0.01, 0.1, 1, and 10 nsec, which were incorrectly indicated in Ref [1]. as 0.1, 1, 10, and 100 nsec, respectively. The correct results for 0.1, 1, 10, and 100 nsec are shown in Fig. 1. The error does not change the conclusions in Ref [1] that non-radiative recombination at the Ge/Si interface has a significant impact on J_th and that S is required below 10³ cm/s in order to achieve J_th on the order of 1 kA/cm².

 

Fig. 1 Calculated J_th as a function of interface recombination velocity S for several different lifetimes in Ge of 0.1–100 ns.

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Additionally, there were typographical errors in Section 4.2 of Ref [1]. In the line below Eq. (6), the statement “..., and is the threshold …” should be corrected to “..., and p_th is the threshold …”, i.e., “p_th” is added before “is the threshold”. The other one is located at five lines below Eq. (6), where the statement “Here, P_th was assumed …” should be corrected to “Here, p_th was assumed …”, i.e., “p_th” replaces “P_th” (the lowercase “p” is correct).