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Fast thermo-optical modulators with doped-silicon heaters operating at 2 µm: erratum

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Abstract

We correct the errors in the performance of the MRR modulator in our paper [Opt. Express 29, 23508, (2021) [CrossRef]  ]. The FWHM of the MRR device should be 0.22nm instead of 0.11nm. And thus, the Q factor, power consumption, and FOM need to be corrected. After the correction, the performance of our devices was still the best among 2µm-waveband TO modulators. All the conclusions are not changed.

© 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

After the manuscript was published [1], we found an error in calculating the FWHM of our MRR-based device. Thus, the Q factor, power consumption Pπ and figure of merit FOM should be corrected correspondingly. The corrected FWHM was 0.22 nm, the updated Pπ power consumption was 6.66 mW, and the corrected FOM was 0.0405 mW−1µs−1. The corrections are listed below.

1. In abstract

…And a lowest Pπ power of 6.66 mW among reported 2-µm TO devices was achieved for a ring resonator-based modulator.”

2. In the introduction

…….As for our proposed MRR-based TO modulator, it also achieved low Pπ power consumption of 6.66 mW and exhibited a high FOM of 0.0405 mW−1µs−1……”

3. In subsection 4.2 - MRR-based modulators

……The modulator claims a Pπ of 6.66 mW……and full width at half maximum (FWHM, 0.22 nm for our device at 0 V) ……MRR with a quality factor of 9×103. …… The modulator realized a FOM record as high as 0.0405 mW−1µs−1.”

4. In Fig. 5(d)

 figure: Fig. 5.

Fig. 5. (a) The structure of the MRR-based TO with p-doped heaters. (b) Normalized transmission spectra of the modulator under varying applied voltage. (c) I-V and O-P curves of the p++-p-p++ junction in the modulator. (d) Resonant peak shift of the modulator with the heating power.

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5. In subsection 4.3 - Discussion

……but also the very low power consumption of 6.66 mW. …..”

6. In Table 1

Tables Icon

Table 1. Performance of some reported silicon TO modulation devices.

7. In conclusion

……As for the MRR-based one, the modulation efficiency was 0.1 nm/mW while low Pπ power consumption of 6.66 mW was achieved……”

All conclusions discussed in the manuscript remain unaltered by these corrections. Our MRR-based TO modulators still have the best performance among 2µm-waveband TO modulators.

Funding

National Key Research and Development Program of China (2019YFB2203003); National Natural Science Foundation of China (61975179, 91950204); Open fund of State Key Laboratory on Integrated Optoelectronics (IOSKL2020KF05); Fundamental Research Funds for the Central Universities (2020XZZX005-07, 2021QNA5007).

Disclosures

The authors declare that there are no conflicts of interest related to this article.

References

1. C. Zhong, H. Ma, C. Sun, M. Wei, Y. Ye, B. Tang, P. Zhang, R. Liu, J. Li, L. Li, and H. Lin, “Fast thermo-optical modulators with doped-silicon heaters operating at 2 µm,” Opt. Express 29(15), 23508–23516 (2021). [CrossRef]  

2. M. R. Watts, J. Sun, C. DeRose, D. C. Trotter, R. W. Young, and G. N. Nielson, “Adiabatic thermo-optic Mach-Zehnder switch,” Opt. Lett. 38(5), 733–735 (2013). [CrossRef]  

3. N. C. Harris, Y. Ma, J. Mower, T. Baehr-Jones, D. Englund, M. Hochberg, and C. Galland, “Efficient, compact and low loss thermo-optic phase shifter in silicon,” Opt. Express 22(9), 10487–10493 (2014). [CrossRef]  

4. M. Mendez-Astudillo, M. Okamoto, Y. Ito, and T. Kita, “Compact thermo-optic MZI switch in silicon-on-insulator using direct carrier injection,” Opt. Express 27(2), 899–906 (2019). [CrossRef]  

5. J. Li, Y. Liu, Y. Meng, K. Xu, J. Du, F. Wang, Z. He, and Q. Song, “2-µm Wavelength Grating Coupler, Bent Waveguide, and Tunable Microring on Silicon Photonic MPW,” IEEE Photonics Technol. Lett. 30(5), 471–474 (2018). [CrossRef]  

6. L. Shen, M. Huang, S. Zheng, L. Yang, X. Peng, X. Cao, S. Li, and J. Wang, “High-Performance Silicon 2 × 2 Thermo-Optic Switch for the 2-um Wavelength Band,” IEEE Photonics J. 11(4), 1–6 (2019). [CrossRef]  

7. W. Shen, J. Du, K. Xu, and Z. He, “On-Chip Selective Dual-Mode Switch for 2-µm Wavelength High-Speed Optical Interconnection,” IEEE Photonics Technol. Lett. 33(10), 483–486 (2021). [CrossRef]  

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Figures (1)

Fig. 5.
Fig. 5. (a) The structure of the MRR-based TO with p-doped heaters. (b) Normalized transmission spectra of the modulator under varying applied voltage. (c) I-V and O-P curves of the p++-p-p++ junction in the modulator. (d) Resonant peak shift of the modulator with the heating power.

Tables (1)

Tables Icon

Table 1. Performance of some reported silicon TO modulation devices.

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