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Separated electrodes for the enhancement of high-speed data transmission in vertical-cavity surface-emitting laser arrays

Yaung-Cheng Zhao, Zohauddin Ahmad, Wu-Min Long, Zuhaib Khan, N. Ledentsov, Marwan Bou Sanayeh, Te-Lieh Pan, Cheng-Chun Chen, Chia-Jui Chang, Tien-Chang Lu, N. N. Ledentsov, and Jin-Wei Shi

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Abstract

In this work, a novel design for the electrodes in a near quasi-single-mode (QSM) vertical-cavity surface-emitting laser (VCSEL) array with Zn-diffusion apertures inside is demonstrated to produce an effective improvement in the high-speed data transmission performance. By separating the electrodes in a compact 2×2 coupled VCSEL array into two parts, one for pure dc current injection and the other for large ac signal modulation, a significant enhancement in the high-speed data transmission performance can be observed. Compared with the single electrode reference, which parallels 4 VCSEL units in the array, the demonstrated array with its separated electrode design exhibits greater dampening of electrical-optical (E-O) frequency response and a larger 3-dB E-O bandwidth (19 vs. 15 GHz) under the same amount of total bias current (20 mA). Moreover, this significant improvement in dynamic performance does not come at the cost of any degradation in the static performance in terms of the maximum near QSM optical output power (17 mW @ 20 mA) and the Gaussian-like optical far-field pattern which has a narrow divergence angle (full-width half maximum (FWHM): 10° at 20 mA). The advantages of the separated electrode design lead to a much better quality of 32 Gbit/sec eye-opening as compared to that of the reference device (jitter: 1.5 vs. 2.8 ps) and error-free 32 Gbit/sec transmissions over a 500 m multi-mode fiber has been achieved under a moderate total bias current of 20 mA.

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Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Figures (15)
Fig. 1.
Fig. 1. Top view of the demonstrated 2${\times} $2 VCSEL array: (a) device A and (b) device B. The insets show zoom-in pictures of the active light emission apertures of two such devices. (c) Conceptual 3-dimensional diagram of active light-emission apertures in device A. An infrared photo of the aperture during the wet oxidation process is shown in the inset.

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Fig. 2.
Fig. 2. Measured L-I curves of (a) device A and (b) device B. (c) Measured I-V curves of device A through the DC and RF pads and for B (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 3.
Fig. 3. Measured output optical spectra under different bias currents for (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 4.
Fig. 4. Measured 1-D and 2-D far-field patterns under different bias currents for (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 5.
Fig. 5. Measured 2-D near-field patterns under two different total bias currents as 20 and 30 mA for (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 6.
Fig. 6. Measured E-O frequency responses of (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B under different bias currents (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 7.
Fig. 7. Measured BTB 32 Gbit/sec transmission results using (a) device A and (b) device B (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 8.
Fig. 8. Measured 32 Gbit/sec transmission results through a 500-meter OM5 fiber using device A with (a) (RF: 8 mA; dc: 12 mA) and (b) (RF: 12 mA; dc: 8 mA). (Wz/Wo/d = 7/7/1.5 µm).

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Fig. 9.
Fig. 9. Measured L-I curves of (a) device A and (b) device B. (c) Measured I-V curves of devices A and B (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 10.
Fig. 10. Measured output optical spectra under different bias currents for (a) device A (dc electrode: 6mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 11.
Fig. 11. Measured 1-D and 2-D far-field patterns under different bias currents for (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 12.
Fig. 12. Measured 2-D near-field patterns under two different total bias currents of 20 and 30 mA for (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 13.
Fig. 13. Measured E-O frequency responses of (a) device A (dc electrode: 6 mA), (b) device A (dc electrode: 8 mA), and (c) device B under different bias currents (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 14.
Fig. 14. Measured BTB 32 Gbit/sec transmission results using (a) device A and (b) device B (Wz/Wo/d = 7/4/1.5 µm).

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Fig. 15.
Fig. 15. Measured 32 Gbit/sec transmission results through a 500-meter OM5 fiber using device A with (a) (RF: 8 mA; dc: 12 mA) and (b) (RF: 12 mA; dc: 8 mA). (Wz/Wo/d = 7/4/1.5 µm).

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