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Ultrahigh extinction ratio silicon micro-ring modulator by MDM resonance for high speed PAM-4 and PAM-8 signaling

Jiacheng Liu, Jiangbing Du, Weihong Shen, Gangqiang Zhou, Linjie Zhou, Wenjia Zhang, Ke Xu, and Zuyuan He

Open Access Open Access

Abstract

Due to the difficulty of controlling the waveguide loss in the doping region, high-speed silicon micro-ring modulators usually have limited extinction ratio. In this work, we present a mode-division-multiplexing (MDM) resonance-enhanced silicon micro-ring modulator with an ultrahigh extinction ratio. We used a two-mode micro-ring resonator and a mode conversion circular structure to trap the light twice within a single micro-ring resonator. Proof-of-concept high extinction ratio up to 55 dB was obtained. 30 Gb/s PAM-8 and 50 Gb/s PAM-4 signaling with a bit error rate below the hard-decision forward error correction (HD-FEC) threshold were demonstrated with the fabricated modulator, indicating great potential for high-order pulse amplitude modulation (PAM).

© 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

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Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Figures (15)
Fig. 1.
Fig. 1. (a) Transmission spectrum of the micro-ring resonator with different values of $\Delta$. (b) Extracted extinction ratio with different values of $\Delta$. (c) Transmission coefficient of the micro-ring resonator with different gaps.

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Fig. 2.
Fig. 2. (a) Schematic structure of the full modulator structure. (b) Cross-section structure of the micro-ring modulator.

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Fig. 3.
Fig. 3. (a) The simulated transmission spectrum of TE$_0$ and TE$_1$ mode. (b) The simulated transmission spectrum of the MRM. (c) Required spectral length and total ER as a function of the mode effective index difference between TE$_0$ and TE$_1$ mode. (d) Transmission spectrum of typical single ring (yellow) and dual-mode ring (blue) modulator

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Fig. 4.
Fig. 4. (a) Top view of the designed DC mode converter. (b) Cross-section of the DC mode converter. (c) Simulated electric field of the mode converter. (d) Calculated CE and XT of the mode converter.

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Fig. 5.
Fig. 5. (a) Refractive index variations for TE$_0$ and TE$_1$ modes as a function of reverse bias voltage. (b) TE$_0$ and (c) TE$_1$ mode overlap with the L-shaped PN junction.

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Fig. 6.
Fig. 6. Optical microscope image of (a) the fabricated MDM resonance-enhanced modulator, (b) the grating coupler, (c) the mode converter and (d) the micro-ring resonator.

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Fig. 7.
Fig. 7. (a) Measured transmission spectrum of the modulator. (b) Transmission spectrum under various reverse bias voltages for TE$_0$+TE$_1$ mode. (c) Transmission spectrum under various reverse bias voltages for TE$_0$ mode. (d) Transmission spectrum under various reverse bias voltages for TE$_1$ mode.

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Fig. 8.
Fig. 8. Measured spectra of the mode converter when (a) the optical power is launched in Port 1, and (b) the optical power is launched in Port 2.

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Fig. 9.
Fig. 9. Measured EO-S$_{21}$ response at −2 V bias voltage.

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Fig. 10.
Fig. 10. Schematic diagram of the high-speed measurement setup.

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Fig. 11.
Fig. 11. Eye diagram for the MDM resonance-enhanced micro-ring modulator at 10 Gb/s OOK modulation.

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Fig. 12.
Fig. 12. (a) BER curves of 40 Gb/s, 50 Gb/s PAM-4 and 30 Gb/s PAM-8 signals. (b) Off-line post-FFE eye diagrams of 40 Gb/s PAM-4 (c) 50 Gb/s PAM-4 and (d) 30 Gb/s PAM-8 with the lowest BERs.

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Fig. 13.
Fig. 13. (a) Temperature map of the waveguide cross section at 20 mW heating input power. (b) Refractive index variations for TE$_0$ and TE$_1$ modes as a function of heating input power. (c) Transmission spectrum of the dual-mode ring under different heating input power.

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Fig. 14.
Fig. 14. (a) ER versus wavelength detuning for a dual-mode ring and a single ring modulator. (b) OMA versus wavelength detuning for a dual-mode ring and a single ring modulator.

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Fig. 15.
Fig. 15. (a) Small-signal circuit model for reverse-biased ring modulators built on SOI substrate. (b) Curve-fitting of the real part of measured S$_{11}$. (c) Curve-fitting of the imaginary part of the measured S$_{11}$.

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