Abstract
We demonstrate a novel buried oxide grating structure formed by selectively-oxidized AlxGa1-xAs grown on nonplanar substrates using low-pressure MOCVD for the first time. Localized aluminum content variation in AlGaAs is obtained with MOCVD growth on nonplanar substrate. Buried aluminum oxide/semiconductor distributed feedback structure is achieved with selective oxidation of these AlGaAs layers. We fabricated a resonant-cavity-enhanced photodetector with the imbedded buried-oxide structure and measured the photodetector responsivity spectrum.
©2002 Optical Society of America
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