Abstract

Subject of study. The performance of a deep-ultraviolet laser diode is improved using a two-stepped Si-doped lower waveguide. Method. The impact of the variations on AlGaN-based deep-ultraviolet laser diodes has been evaluated based on the simulated results after theoretical calculations. The two AlGaN-based ultraviolet laser diodes as a traditional device and the proposed device have been analyzed comparatively based on their performance within a nomination wavelength region range of 269–280 nm. Main results. Using a two-stepped Si-doped lower waveguide, the lasing threshold current decreases in the proposed device D2 in comparison to the traditional device D1. The operating threshold voltage of D1 is 13.8 V, and that of D2 is 4.24 V, respectively, with lasing threshold currents of 0.4 A and 0.002 A, respectively. Practical significance. The optimization of the design of AlGaN-based ultraviolet laser diodes following the perfect bulk aluminium nitride substrate in the traditional device is the crucial factor of the practical significance of the scientific field utilized in the proposed device. The performance of deep-ultraviolet laser diodes is improved when a suitably constructed two-stepped Si-doped lower waveguide substitutes the traditional lower waveguide. The noted improvements are the reduction in total optical loss with the improved optical confinement factor. These are primarily due to an increase in the hole injection current and a decrease in the electron leakage current.

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