Abstract

This paper discusses how the half-width and the depth of the phototransformed region of a chalcogenide semiconductor depend on the power of the recording Gaussian laser beam. It is shown that the shape of the region is close to parabolic or trapezoidal, depending on the parameters of the photosensitive material and the power of the recording beam. The results can help to select the necessary conditions for optimizing the information-recording regime in thin films of chalcogenide semiconductors. The proposed model qualitatively describes the characteristics of the pits obtained in thin films of As40S60 after positive selective etching. © 2005 Optical Society of America

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