Abstract
Far-infrared measurements on oriented bismuth deposits have yielded the indexes of absorption and refraction together with the electrical conductivities and dielectric constants, as well as the relaxation times of the holes and electrons in the deposits. The dielectric constants for these deposits have been found to approach the value zero near the wavelength of the reflection minimum. The reduced masses for the electrical carriers derived from the measurements here are found to be in fair agreement with values determined by other methods.
© 1963 Optical Society of America
Full Article |
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Figures (3)
You do not have subscription access to this journal. Figure files are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Tables (5)
You do not have subscription access to this journal. Article tables are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Equations (4)
You do not have subscription access to this journal. Equations are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription