Abstract

Recently, there has been a growing demand for high-speed mid-wave infrared (MWIR) photodetectors (PDs) driven by the emergence of new fields, such as free-space communication and frequency comb spectroscopy. In this study, we investigated a high-speed InAs/GaSb type-II superlattice (T2SL) MWIR uni-traveling carrier (UTC) PD with relatively low dark current and high responsivity. We also perform an inductive peaked dewar packaging on the PD to be user-friendly and allow cryogenic operation. The original on-wafer PD shows a dark current density of 54.05 A/cm² at 300 K, along with a responsivity exceeding 0.36 A/W at 4.5 μm and a 3-dB bandwidth of 3.83 GHz at −5 V bias. The inductive-peaked device in dewar packaging demonstrates a dark current density of 1.65×10⁻⁵ A/cm² at 77 K, and a responsivity of 0.39 A/W at 4 μm, and a 3-dB bandwidth of 5.29 GHz.